英国·william威廉|官方网站-Brand Company

CN EN
Home
About Us
Newpros
SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies
SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies Back
PDF

Introduction TO-247 and TOLL encapsulated N600V/650V SJ MOSFETs are manufactured by deep trench technology and multi-layer epitaxy technology, with lower on-state resistance Rds and gate charge Qg, significantly reducing turn-on and turn-off losses. The products can support higher frequency and dynamic response, which is suitable for applications of high power density and high efficiency power electronic conversion systems.
Features 1. Deep trench and multi-layer epitaxy technology is applied, lower internal resistance and excellent switching property;
2. TOLL, TO-247 encapsulation, suitable for high-power applications;
3. Strong UIS capability, better Qg and Rds parameters, which can support higher frequency and dynamic response.
SPECIFICATION

YJN48C60HJ YJT33C60HJ

Related new products

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

SGT N80-85V Power MOSFET

YBS2G Gulling Patch Rectifier Bridge

N100V MOSFET for Automotive Electronic Applications

SOD-323FL Schottky

N150V MOSFET for Industrial Control

GBU Package Extended 35A-50A High Current Series Products

New N150V SGT MOSFETs

Automotive-grade IGBT for Air Conditioning Compressor Controllers in New Energy Vehicles

N40V SGT MOSFET for Automotive Motor Drives
XML 地图